Short-Distance Teleportation of an Arbitrary Two-Qubit State Via a Bell State

We propose a scheme for teleportation of an arbitrary two-qubit state by using a Bell state as the quantum channel working together with an auxiliary qubit. Our scheme needs less entanglement resource, but at the cost of shortening teleportation distance. This is because that in order to successfully recover the teleported state, both sender and receiver need to implement quantum-gate operations on the shared auxiliary qubit. So, the auxiliary qubit must be close to both sender and receiver. Otherwise, the sender and receiver cannot carry out quantum-gate operations on it. Thus, our scheme is invalid for long-distance teleportation. But for short-distance teleportation, our scheme is an optimal choice because it requires less entanglement resource. From a practical point of view, our scheme is very promising for application in quantum teleportation on chip.

     

Reduced Density Matrix and Quantum Correlation in Two-Qubit Quantum Rabi Model

International Journal of Theoretical Physics - In this work, we give an analytical derivation of the reduced density matrix between two qubits in a cavity field, which is described by the quantum...     

Finding any given 2‐factor in sparse pseudorandom graphs efficiently

Given an $n$‐vertex pseudorandom graph $G$ and an $n$‐vertex graph $H$ with maximum degree at most two, we wish to find a copy of $H$ in $G$, that is, an embedding $\phi :V\left(H\right)\to V\left(G\right)$ so that $\phi \left(u\right)\phi \left(v\right)\in E\left(G\right)$ for all $uv\in E\left(H\right)$. Particular instances of this problem include finding a triangle‐factor and finding a Hamilton cycle in $G$. Here, we provide a deterministic polynomial time algorithm that finds a given $H$ in any suitably pseudorandom graph $G$. The pseudorandom graphs we consider are $\left(p,\lambda \right)$‐bijumbled graphs of minimum degree which is a constant proportion of the average degree, that is, $\mathrm{\Omega }\left(pn\right)$. A $\left(p,\lambda \right)$‐bijumbled graph is characterised through the discrepancy property: $|e\left(A,B\right)?p|A||B||<\lambda \sqrt{|A||B|}$ for any two sets of vertices $A$ and $B$. Our condition $\lambda =O(p^{2}n/\log n)$ on bijumbledness is within a log factor from being tight and provides a positive answer to a recent question of Nenadov. We combine novel variants of the absorption‐reservoir method, a powerful tool from extremal graph theory and random graphs. Our approach builds on our previous work, incorporating the work of Nenadov, together with additional ideas and simplifications.     

Uniform local well-posedness and inviscid limit for the Benjamin-Ono-Burgers equation

In this paper, we study the Cauchy problem for the Benjamin-Ono-Burgers equation \({\partial _t}u - \epsilon \partial _x^2u + {\cal H}\partial _x^2u + u{u_x} = 0\), where \({\cal H}\) denotes the Hilbert transform operator. We obtain that it is uniformly locally well-posed for small data in the refined Sobolev space \({\tilde H^\sigma }(\mathbb{R})\,\,(\sigma \geqslant 0)\), which is a subspace of L²(ℝ). It is worth noting that the low-frequency part of \({\tilde H^\sigma }(\mathbb{R})\) is scaling critical, and thus the small data is necessary. The high-frequency part of \({\tilde H^\sigma }(\mathbb{R})\) is equal to the Sobolev space H^σ (ℝ) (σ ⩾ 0) and reduces to L²(ℝ). Furthermore, we also obtain its inviscid limit behavior in \({\tilde H^\sigma }(\mathbb{R})\) (σ ⩾ 0).

     

A Generalization of Lappan’s Theorem to Higher Dimensional Complex Projective Space

In this paper, the authors discuss a generalization of Lappan’s theorem to higher dimensional complex projective space and get the following result: Let f be a holomorphic mapping of ? into Pⁿ(C), and let H₁, · · · , H_q be hyperplanes in general position in Pⁿ(C).Assume that sup {(1 ? |z|²)f^?(z) : z ∈ q[ j=1 f^?1(H_j )o < ∞,if q ≥ 2n² + 3, then f is normal.     

Non-isothermal thermogravimetric analysis of pyrolysis kinetics of four oil shales using Sestak–Berggren method

Journal of Thermal Analysis and Calorimetry - In this study, the non-isothermal pyrolysis method was used to investigate the pyrolysis characteristics of oil shale from four areas: namely Nongan,...     

Evaluation of Charged Defect Energy in Two-Dimensional Semiconductors for Nanoelectronics: The WLZ Extrapolation Method

Defects play a central role in controlling the electronic properties of two-dimensional (2D) materials and realizing the industrialization of 2D electronics. However, the evaluation of charged defects in 2D materials within first-principles calculation is very challenging and has triggered a recent development of the WLZ (Wang, Li, Zhang) extrapolation method. This method lays the foundation of the theoretical evaluation of energies of charged defects in 2D materials within the first-principles framework. Herein, the vital role of defects for advancing 2D electronics is discussed, followed by an introduction of the fundamentals of the WLZ extrapolation method. The ionization energies (IEs) obtained by this method for defects in various 2D semiconductors are then reviewed and summarized. Finally, the unique defect physics in 2D dimensions including the dielectric environment effects, defect ionization process, and carrier transport mechanism captured with the WLZ extrapolation method are presented. As an efficient and reasonable evaluation of charged defects in 2D materials for nanoelectronics and other emerging applications, this work can be of benefit to the community.     

Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide(a-SiOx:H) on〈100〉- and 〈111〉-orientated c-Si wafers

Hydrogenated amorphous silicon oxide(a-SiOx:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction(SHJ) solar cells. In this paper, a-SiOx:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime(τ(eff)) of 4743 μs and corresponding implied opencircuit voltage(iV(oc)) of 724 mV are obtained on〈100〉-orientated c-Si wafers. While τ(eff) of 2429 μs and iV_oc of 699 mV are achieved on 111-orientated substrate. The FTIR and XPS results indicate that the a-SiOx:H network consists of SiOx(Si-rich), Si–OH, Si–O–SiHx, SiO2 ≡ Si–Si, and O3 ≡ Si–Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiOx:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%.     

Preparation of pillared layered antimony hydroxide and its flame retardancy in thermoplastic polyurethane

Journal of Thermal Analysis and Calorimetry - In this article, a pillared layered antimony hydroxide (Sb-LH) material has been prepared by the hydrothermal method. X-ray diffraction,...     

An improved evaluation of the neutron background in the PandaX-Ⅱ experiment

In dark matter direct detection experiments,neutron is a serious source of background,which can mimic the dark matter-nucleus scattering signals.In this paper,we present an improved evaluation of the neutron background in the PandaX-II dark matter experiment by a novel approach.Instead of fully relying on the Monte Carlo simulation,the overall neutron background is determined from the neutron-induced high energy signals in the data.In addition,the probability of producing a dark-matter-like background per neutron is evaluated with a complete Monte Carlo generator,where the correlated emission of neutron(s)andγ(s)in the(α,n)reactions and spontaneous fissions is taken into consideration.With this method,the neutron backgrounds in the Run 9(26-ton-day)and Run 10(28-ton-day)data sets of PandaX-II are estimated to be(0.66±0.24)and(0.47±0.25)events,respectively.